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FDC645 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDC645
Szczegółowy opis  N-Channel PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC645 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDC645N Rev B(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
30
V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
22
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
0.8
1.4
2
V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
– 4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 5.5 A
VGS = 10 V, ID = 6.2 A
VGS = 4.5 V, ID = 5.5 A, TJ =125
°C
25
23
34
30
26
48
m
ID(on)
On–State Drain Current
VGS = 4.5 V, VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 5.5 A
33
S
Dynamic Characteristics
Ciss
Input Capacitance
1460
pF
Coss
Output Capacitance
227
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
96
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
35
56
ns
tf
Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
714
ns
Qg
Total Gate Charge
13
21
nC
Qgs
Gate–Source Charge
3.6
nC
Qgd
Gate–Drain Charge
VDS = 15 V, ID = 6.2 A,
VGS = 4.5 V
3.6
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.7
1.2
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in
2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width
≤=300 µs, Duty Cycle ≤=2.0%


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