FDC653N datasheet(3/4 Pages) FAIRCHILD

Numer części	FDC653N

Szczegółowy opis	N-Channel Enhancement Mode Field Effect Transistor

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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FDC653N Rev.B

0

0.5

1

1.5

2

0

3

6

9

12

15

V

, DRAIN-SOURCE VOLTAGE (V)

V

= 10V

GS

DS

3.5

3.0

5.0

4.0

4.5

6.0

0

3

6

9

12

15

0.5

1

1.5

2

2.5

3

3.5

I

, DRAIN CURRENT (A)

D

V

=3.5V

GS

4.5

10

4.0

5.0

6.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

Figure 5. Transfer Characteristics.

0

0.2

0.4

0.6

0.8

1

1.2

0.0001

0.001

0.01

0.1

1

15

V

, BODY DIODE FORWARD VOLTAGE (V)

T = 125°C

A

25°C

-55°C

V

=0V

GS

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1

1.2

1.4

1.6

1.8

T , JUNCTION TEMPERATURE (°C)

J

V

= 10V

GS

I = 5.0A

D

2

4

6

8

10

0

0.03

0.06

0.09

0.12

0.15

0.18

V

, GATE TO SOURCE VOLTAGE (V)

GS

T = 125°C

A

T = 25°C

A

I =2A

D

1.5

2

2.5

3

3.5

4

4.5

0

3

6

9

12

15

V

, GATE TO SOURCE VOLTAGE (V)

25°C

125°C

V

= 5V

DS

GS

T = -55°C

A

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Podobny opis - FDC653N

Producent	Numer części	Arkusz danych	Szczegółowy opis
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