FDC655AN datasheet(1/4 Pages) FAIRCHILD

Numer części	FDC655AN

Szczegółowy opis	Single N-Channel, Logic Level, PowerTrenchTM MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

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June 1998

FDC655AN

Single N-Channel, Logic Level, PowerTrench

TM MOSFET

General Description

Features

Absolute Maximum Ratings T

A = 25°C unless otherwise note

Symbol Parameter

FDC655AN

Units

V

DSS

Drain-Source Voltage

30

V

GSS

Gate-Source Voltage - Continuous

±20

V

I

D

Drain Current - Continuous

(Note 1a)

6.3

A

- Pulsed

20

P

D

Maximum Power Dissipation

(Note 1a)

1.6

W

(Note 1b)

0.8

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

30

°C/W

FDC655AN Rev.C

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and fast

switching are required.

6.3 A, 30 V. R

DS(ON) = 0.027 Ω

@ V

GS = 10 V

R

DS(ON) = 0.035 Ω

@ V

GS = 4.5 V.

Fast switching.

Low gate charge ( typical 9 nC)

.

SuperSOT

TM-6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick); pin compatible with

TSOP-6.

SOIC-16

SOT-23

SuperSOT

TM-8

SO-8

SOT-223

SuperSOT

TM-6

3

5

6

4

1

2

3

D

S

D

G

SuperSOT

-6

TM

.55A

pin 1

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