FDD2612 Rev B1(W)

Typical Characteristics

0

3

6

9

12

15

024

68

10

Q

I

V

150V

100V

0

50

100

150

200

250

300

350

0

40

80

120

160

200

V

C

RSS

f = 1MHz

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.001

0.01

0.1

1

10

100

0.1

1

10

100

1000

DC

1s

100ms

V

SINGLE PULSE

10ms

1ms

100µs

10s

0

20

40

60

80

100

0.01

0.1

1

10

100

1000

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.