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FDD6612 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDD6612 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDD6612A/FDU6612A Rev. E(W) Typical Characteristics 0 10 20 30 40 50 60 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 10V 4.5V 3.5V 3.0V 6.0V 4.0V 5.0V 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20 30 40 ID, DRAIN CURRENT (A) VGS = 3.5V 4.5V 5.0V 10V 4.0V 6.0V Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 9.5A VGS = 10V 0.01 0.02 0.03 0.04 0.05 0.06 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 5 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC -55 oC 25 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature |
Podobny numer części - FDD6612 |
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Podobny opis - FDD6612 |
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