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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FDT458P Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDT458P Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  June 2001 ©2001 Fairchild Semiconductor Corporation FDT458P Rev. B(W) FDT458P 30V P-Channel PowerTrench® ® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. Applications • Battery chargers • Motor drives Features • 3.4 A, –30 V. RDS(ON) = 130 mΩ @ VGS = 10 V RDS(ON) = 200 m Ω @ VGS = 4.5 V • Fast switching speed • Low gate charge (2.5 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package G D S D SOT-223 S G D D G D S SOT-223* (J23Z) S G D Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage – 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 3.4 A – Pulsed 10 Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 PD (Note 1c) 1.1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 458P FDT458P 13’’ 12mm 2500 units |
Podobny numer części - FDT458P |
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Podobny opis - FDT458P |
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