MMBD914LT3G datasheet(2/4 Pages) ONSEMI

Numer części	MMBD914LT3G

Szczegółowy opis	High-Speed Switching Diode

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Producent	ONSEMI [ON Semiconductor]

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ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IR = 100 mAdc)

V(BR)

100

−

Vdc

Reverse Voltage Leakage Current

(VR = 20 Vdc)

(VR = 75 Vdc)

IR

−

25

5.0

nAdc

mAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CT

−

4.0

pF

Forward Voltage

(IF = 10 mAdc)

VF

−

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

trr

−

4.0

ns

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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ON Semiconductor	MMBD914LT3G	52Kb / 3P	High?뭆peed Switching Diode January, 2006 ??Rev. 5
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