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2SJ681Q Arkusz danych(PDF) 5 Page - Toshiba Semiconductor |
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2SJ681Q Arkusz danych(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SJ681 2010-03-01 5 rth − tw Safe Operating Area EAS – Tch Drain-source voltage VDS (V) Pulse width tw (s) Channel temperature (initial) Tch (°C) ID max (continuous) ID max (pulsed) * DC operation Tc = 25°C 1 ms * 100 μs * *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0 25 10 30 50 40 50 75 100 125 150 0.01 10 μ 100 μ 1 m 10 m 100 m 1 10 0.1 1 10 0.01 0.02 0.05 0.1 0.2 Duty = 0.5 Single pulse T PDM t Duty = t/T Rth (ch-c) = 6.25°C/W RG = 25 Ω VDD = −25 V, L = 2.2 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 20 −0.1 −1 −10 −100 VDSS max −1 −10 −100 −0.1 Waveform IAR BVDSS VDD VDS Test circuit −15 V 0 V |
Podobny numer części - 2SJ681Q |
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Podobny opis - 2SJ681Q |
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