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PZT2907AT1G Arkusz danych(PDF) 3 Page - ON Semiconductor |
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PZT2907AT1G Arkusz danych(HTML) 3 Page - ON Semiconductor |
3 / 4 page PZT2907AT1, SPZT2907AT1G http://onsemi.com 3 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit INPUT Zo = 50 W PRF = 150 Hz RISE TIME 2.0 ns 0 1.0 k 50 -16 V 200 ns -30 V 200 TO OSCILLOSCOPE RISE TIME 5.0 ns 0 1.0 k 50 -30 V 200 ns -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns +15 V 1.0 k 1N916 INPUT Zo = 50 W PRF = 150 Hz RISE TIME 2.0 ns TYPICAL ELECTRICAL CHARACTERISTICS 1000 100 10 -1000 -100 -10 -1.0 -0.1 IC, COLLECTOR CURRENT (mA) TJ = 125C TJ = -55C TJ = 25C Figure 3. DC Current Gain 1000 100 10 -1000 -100 -10 -1.0 VCE = -20 V TJ = 25C IC, COLLECTOR CURRENT (mA) Figure 4. Current Gain Bandwidth Product -1.0 -0.8 -0.6 -0.4 -0.2 0 -500 -200 -100 -50 -20 -10 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IC, COLLECTOR CURRENT (mA) Figure 5. “ON” Voltage TJ = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V VCE(sat) @ IC/IB = 10 30 20 10 7.0 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 REVERSE VOLTAGE (VOLTS) Figure 6. Capacitances Ceb Ccb |
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Podobny opis - PZT2907AT1G |
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