PZT2907AT3 datasheet(3/4 Pages) ONSEMI

Numer części	PZT2907AT3

Szczegółowy opis	PNP Silicon Epitaxial Transistor

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PZT2907AT1, SPZT2907AT1G

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Figure 1. Delay and Rise

Time Test Circuit

Figure 2. Storage and Fall

Time Test Circuit

INPUT

Zo = 50 W

PRF = 150 Hz

RISE TIME

 2.0 ns

0

1.0 k

50

-16 V

200 ns

-30 V

200

TO OSCILLOSCOPE

RISE TIME

 5.0 ns

0

1.0 k

50

-30 V

200 ns

-6.0 V

37

TO OSCILLOSCOPE

RISE TIME

 5.0 ns

+15 V

1.0 k

1N916

INPUT

Zo = 50 W

PRF = 150 Hz

RISE TIME

 2.0 ns

TYPICAL ELECTRICAL CHARACTERISTICS

1000

100

10

-1000

-100

-10

-1.0

-0.1

IC, COLLECTOR CURRENT (mA)

TJ = 125C

TJ = -55C

TJ = 25C

Figure 3. DC Current Gain

1000

100

10

-1000

-100

-10

-1.0

VCE = -20 V

TJ = 25C

IC, COLLECTOR CURRENT (mA)

Figure 4. Current Gain Bandwidth Product

-1.0

-0.8

-0.6

-0.4

-0.2

0

-500

-200

-100

-50

-20

-10

-0.1 -0.2 -0.5 -1.0 -2.0

-5.0

IC, COLLECTOR CURRENT (mA)

Figure 5. “ON” Voltage

TJ = 25C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE(sat) @ IC/IB = 10

30

20

10

7.0

5.0

3.0

2.0

-0.1

-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30

REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitances

Ceb

Ccb

Podobny numer części - PZT2907AT3

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	PZT2907AT3G	108Kb / 4P	PNP Silicon Epitaxial Transistor August, 2013 ??Rev. 10

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