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W08G-E451 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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W08G-E451 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page W005G thru W10G Vishay General Semiconductor Document Number: 88769 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Forward Characteristics Per Diode Figure 4. Typical Reverse Leakage Characteristics Per Diode 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) T J = 100 °C T J = 25 °C Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance 0.1 1 10 100 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.1 0.01 1 10 100 1 10 100 0.1 t - Heating Time (s) 0.220 (5.6) 0.160 (4.1) 0.388 (9.86) 0.348 (8.84) 1.0 (25.4) MIN. 0.060 (1.52) 0.020 (0.51) 0.032 (0.81) 0.028 (0.71) 0.348 (8.84) 0.308 (7.82) 0.220 (5.6) 0.180 (4.6) 0.220 (5.6) 0.180 (4.6) Case Style WOG |
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