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BA18BC0FP-E2 Arkusz danych(PDF) 11 Page - Rohm |
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BA18BC0FP-E2 Arkusz danych(HTML) 11 Page - Rohm |
11 / 19 page 11/16 BAxxBC0 Series BAxxBC0W Series BA00BC0WCP-V5 Datasheet TSZ02201-0R6R0A600120-1-2 TSZ22111・15・001 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 26.Jun.2012 Rev.001 Fig.23 Bypass Diode Fig.24 Example of Simple Bipolar IC Architecture Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority. GND P 基板 N P N N P + P + (端子 A) 抵抗 GND N P N N P + P + (端子 B) トランジスタ(NPN) B N E C GND P 基板 寄生素子 Transistor (NPN) Resistor (PIN A) P substrate Parasitic elements (PIN B) N P N (PINA) GND Parasitic elements GND (PINB) B C E Parasitic elements or transistors P substrate Parasitic elements VCC Output pin Diode for preventing back current flow Bypass Diode |
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