FQA34N25 datasheet(3/8 Pages) FAIRCHILD

Numer części	FQA34N25

Szczegółowy opis	250V N-Channel MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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Rev. A, October 2001

0

20406080

0

2

4

6

8

10

12

V

DS = 125V

V

DS = 50V

V

DS = 200V

※ Note : I

D

= 34 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

10

2

150℃

※ Notes :

1. V

GS

= 0V

2. 250μ s Pulse Test

25℃

V

SD

, Source-Drain voltage [V]

0

30

60

90

120

150

180

0.0

0.1

0.2

0.3

0.4

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

2

468

10

-1

10

0

10

1

10

2

150℃

25℃

-55℃

※ Notes :

1. V

DS

= 50V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom: 5.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics.

Figure 6. Gate -Charge Characteristics.

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage.

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 2. Transfer Characteristics.

Figure 1. On-Region Characteristics.

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