FQD2N100 datasheet(4/9 Pages) FAIRCHILD

Numer części	FQD2N100

Szczegółowy opis	1000V N-Channel MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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Rev. A, February 2002

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※ N o te s :

1 . Z

θ JC(t ) = 2 . 5

℃ /W M a x .

2 . D u ty F a c t o r , D = t

1

/t

2

3 . T

JM - T C =

P

DM * Z θ

JC(t )

s i ng le pu ls e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

t

1 , S q u a r e

W a v e P u ls e D u ra tio n [s e c ]

25

50

75

100

125

150

0.0

0.3

0.6

0.9

1.2

1.5

1.8

T

C, Case Temperature [

℃]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

µs

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 0.8 A

T

J

, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS

=0V

2. I

D = 250µA

T

J, Junction Temperature [

o

C]

Typical Characteristics

(Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t

2

Podobny numer części - FQD2N100

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Fairchild Semiconductor	FQD2N100	736Kb / 9P	1000V N-Channel MOSFET
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Fairchild Semiconductor	FQD2N100TM	736Kb / 9P	1000V N-Channel MOSFET
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