1

MRF1507 MRF1507T1

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode Lateral MOSFETs

The MRF1507 is designed for broadband commercial and industrial

applications at frequencies to 520 MHz. The high gain and broadband

performance of this device makes it ideal for large–signal, common source

amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts

Output Power — 8 Watts

Power Gain — 10 dB

Efficiency — 65%

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

• Excellent Thermal Stability

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,

520 MHz, 2 dB Overdrive

• Broadband UHF/VHF Demonstration Amplifier

Information Available Upon Request

• RF Power Plastic Surface Mount Package

• Available in Tape and Reel by Adding T1 Suffix to

Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage (1)

VDSS

25

Vdc

Gate–Source Voltage

VGS

±20

Vdc

Drain Current — Continuous

ID

4

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

62.5

0.50

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

Tj

150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2

°C/W

(1) Not designed for 12.5 volt applications.

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF1507/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF1507

MRF1507T1

8 W, 520 MHz, 7.5 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 466–02, STYLE 1

(PLD 1.5)

G

D

S

REV 1