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FQP22P10 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FQP22P10
Szczegółowy opis  100V P-Channel MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP22P10 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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Rev. B, August 2002
©2002 Fairchild Semiconductor Corporation
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-100
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.1
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -100 V, VGS = 0 V
--
--
-1
µA
VDS = -80 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -11 A
--
0.096
0.125
gFS
Forward Transconductance
VDS = -40 V, ID = -11 A
--
13.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
1170
1500
pF
Coss
Output Capacitance
--
460
600
pF
Crss
Reverse Transfer Capacitance
--
160
200
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -50 V, ID = -22 A,
RG = 25 Ω
--
17
45
ns
tr
Turn-On Rise Time
--
170
350
ns
td(off)
Turn-Off Delay Time
--
60
130
ns
tf
Turn-Off Fall Time
--
110
230
ns
Qg
Total Gate Charge
VDS = -80 V, ID = -22 A,
VGS = -10 V
--
40
50
nC
Qgs
Gate-Source Charge
--
7.0
--
nC
Qgd
Gate-Drain Charge
--
21
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-22
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-88
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -22 A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -22 A,
dIF / dt = 100 A/µs
--
110
--
ns
Qrr
Reverse Recovery Charge
--
0.6
--
µC


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