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FQP4N20 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FQP4N20 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2000 Fairchild Semiconductor International Rev. A2, December 2000 25 50 75 100 125 150 0 1 2 3 4 T C, Case Temperature [ ℃] 10 0 10 1 10 2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 1.9 A T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μA T J , Junction Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ※ N o te s : 1 . Z θ JC (t ) = 2 . 7 8 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t ) s in g le p u ls e D= 0 . 5 0. 02 0. 2 0. 05 0. 1 0. 01 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t 1 PDM t 2 |
Podobny numer części - FQP4N20 |
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Podobny opis - FQP4N20 |
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