FQA13N80-F109 datasheet(7/8 Pages) FAIRCHILD | 12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A

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FQA13N80-F109 Arkusz danych(PDF) 7 Page - Fairchild Semiconductor

Numer części	FQA13N80-F109

Szczegółowy opis	12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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Mechanical Dimensions

Dimensions in Millimeters

TO-3PN

7

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©2007 Fairchild Semiconductor Corporation

FQA13N80_F109 Rev.

C0

Podobny numer części - FQA13N80-F109

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FQA13N80	731Kb / 8P	800V N-Channel MOSFET
	FQA13N80	830Kb / 9P	800V N-Channel MOSFET
	FQA13N80	833Kb / 8P	800V N-Channel MOSFET
Inchange Semiconductor ...	FQA13N80	363Kb / 2P	isc N-Channel MOSFET Transistor
Fairchild Semiconductor	FQA13N80	830Kb / 9P	800V N-Channel MOSFET

Podobny opis - FQA13N80-F109

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FDMS86252	268Kb / 7P	Max rDS(on) = 51 m廓 at VGS = 10 V, ID = 4.6 A
	FDS89161LZ	251Kb / 7P	Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A
	FDMA1430JP	222Kb / 8P	Max rDS(on) = 90 m廓 at VGS = -4.5 V, ID = -2.9 A
	BSS84-NL	144Kb / 5P	??.13A, ??0V. RDS(ON) = 10廓 @ VGS = ?? V
	FQB34P10TM-F085	1Mb / 8P	-33.5A, -100V, RDS(on) = 0.06廓 @VGS = -10 V
	FDPF16N50UT	826Kb / 9P	R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A
International Rectifier	IRF7476PBF	162Kb / 8P	HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0m廓@VGS = 4.5V , ID = 15A )
International Rectifier	IRF7831PBF	264Kb / 10P	HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6m廓@VGS = 10V , Qg(typ.) = 40nC )
Texas Instruments	TPS22990	4Mb / 34P	[Old version datasheet] 5.5-V, 10-A, 3.9-m廓 On-Resistance Load Switch
Fairchild Semiconductor	FCPF7N60NT	388Kb / 10P	N-Channel SupreMOS짰 MOSFET 600 V, 6.8 A, 520 m廓

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