FDD86326 datasheet(4/6 Pages) FAIRCHILD

Numer części	FDD86326

Szczegółowy opis	N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm

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Producent	FAIRCHILD [Fairchild Semiconductor]

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4 / 6 page

FDD86326 Rev.C2

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4

Figure 7.

03

6

9

12

15

0

2

4

6

8

10

ID = 8 A

VDD = 50 V

VDD = 25 V

Qg, GATE CHARGE (nC)

VDD = 75 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

80

10

100

1000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

30

1

2

3

4

5

6

7

8

9

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

10

20

30

40

RTJC = 2

oC/W

VGS = 4.5 V

VGS = 10 V

T

c

, CASE TEMPERATURE

(

o

C

)

Maximum Continuous Drain

Current vs Case Temperature

Figure 11. Forward Bias Safe

Operating Area

1

10

100

200

0.1

1

10

100

DC

100 ms

10 ms

1 ms

100 us

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RTJC = 2

oC/W

TC = 25

oC

Figure 12.

10

-5

10

-4

10

-3

10

-2

10

-1

1

10

50

100

1000

10000

V

GS = 10 V

t, PULSE WIDTH (sec)

SINGLE PULSE

RTJC = 2

oC/W

TC = 25

oC

Single Pulse Maximum

Power Dissipation

Typical Characteristics T

J = 25 °C unless otherwise noted

Podobny numer części - FDD86326

Producent	Numer części	Arkusz danych	Szczegółowy opis
Inchange Semiconductor ...	FDD86326	351Kb / 2P	isc N-Channel MOSFET Transistor

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