Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

FDC642P_F085 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor

Numer części FDC642P_F085
Szczegółowy opis  FDC642P P-Channel 2.5V specified PowerTrench MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC642P_F085 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor

  FDC642P_F085 Datasheet HTML 1Page - Fairchild Semiconductor FDC642P_F085 Datasheet HTML 2Page - Fairchild Semiconductor FDC642P_F085 Datasheet HTML 3Page - Fairchild Semiconductor FDC642P_F085 Datasheet HTML 4Page - Fairchild Semiconductor FDC642P_F085 Datasheet HTML 5Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 4 / 5 page
background image
FDC642P, Rev. B
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R
(t) = r(t) * R
R
= 156°C/W
T - T
= P * R
(t)
A
J
P(pk)
t1
t 2
θJA
θJA
θJA
θJA
0
1
2
3
4
5
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
SINGLE PULSE
RθJA = 156
oC/W
TA = 25
oC
0
1
2
3
4
5
02468
10
Qg, GATE CHARGE (nC)
ID = -4A
V
DS = -5V
-10V
-15V
0.01
0.1
1
10
100
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
DC
1s
100ms
10ms
1ms
100
µs
VGS= -4.5V
SINGLE PULSE
RθJA= 156
oC/W
TA= 25
oC
RDS(ON) LIMIT
0
250
500
750
1000
1250
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
C
OSS
C
RSS
f = 1 MHz
V
GS = 0 V


Podobny numer części - FDC642P_F085

ProducentNumer częściArkusz danychSzczegółowy opis
logo
ON Semiconductor
FDC642P-F085 ONSEMI-FDC642P-F085 Datasheet
1Mb / 9P
   MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m
September, 2020 ??Rev. 3
FDC642P-F085P ONSEMI-FDC642P-F085P Datasheet
1Mb / 9P
   MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m
September, 2020 ??Rev. 3
More results


Html Pages

1 2 3 4 5


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com