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FDC642P_F085 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDC642P_F085 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDC642P, Rev. B Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics Figure 8. Capacitance Characteristics Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.00001 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = 156°C/W T - T = P * R (t) A J P(pk) t1 t 2 θJA θJA θJA θJA 0 1 2 3 4 5 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 156 oC/W TA = 25 oC 0 1 2 3 4 5 02468 10 Qg, GATE CHARGE (nC) ID = -4A V DS = -5V -10V -15V 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100 µs VGS= -4.5V SINGLE PULSE RθJA= 156 oC/W TA= 25 oC RDS(ON) LIMIT 0 250 500 750 1000 1250 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS C OSS C RSS f = 1 MHz V GS = 0 V |
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