©2002 Fairchild Semiconductor Corporation

Rev. A

PSPICE Electrical Model

.SUBCKT HUFA75433S3S

February 2002

CA 12 8 2.5e-9

CB 15 14 2.8e-9

CIN 6 8 1.4e-9

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 65.5

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEMP 20 6 18 22 1

IT 8 17 1

LGATE 1 9 6.57e-9

LDRAIN 2 5 1e-9

LSOURCE 3 7 3.4e-9

RLGATE 1 9 65.7

RLDRAIN 2 5 10

RLSOURCE 3 7 34

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 2.7e-3

RGATE 9 20 1.53

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 6.9e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*215),2.5))}

.MODEL DBODYMOD D (IS = 1.3e-12 RS = 3.05e-3 TRS1 = 2.4e-3 TRS2 = 1.5e-7 CJO = 1.92e-9 TT = 5e-9 M = 0.50 XTI=4.5)

.MODEL DBREAKMOD D (RS = 2.2 TRS1 = 2.4e-3 TRS2 = -2e-5)

.MODEL DPLCAPMOD D (CJO = 1.93e-9 IS = 1e-30 N = 10 M = 0.79)

.MODEL MmedMOD NMOS (VTO=2.93 KP=2.6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.53)

.MODEL MstroMOD NMOS (VTO=3.55 KP=70 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MweakMOD NMOS (VTO=2.62 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=15.3 RS=0.1)

.MODEL RBREAKMOD RES (TC1 =1.2e-3 TC2 = -1.7e-8)

.MODEL RDRAINMOD RES (TC1 = 2e-2 TC2 = 5.1e-5)

.MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = 2.9e-6)

.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)

.MODEL RVTEMPMOD RES (TC1 = -2.8e-3 TC2 = 1e-6)

.MODEL RVTHRESMOD RES (TC1 = -2.1e-3 TC2 = -1.1e-5)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6 VOFF= -3)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -6)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.4 VOFF= 0.3)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF= -0.4)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

18

22

+

-

6

8

+

-

5

51

19

8

+

-

17

18

6

8

+

-

5

8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17

18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS

EDS

14

8

13

8

14

13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

6