HUFA75542P3 datasheet(1/10 Pages) FAIRCHILD

Numer części	HUFA75542P3

Szczegółowy opis	75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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HUFA75542P3, HUFA75542S3S Rev. B

HUFA75542P3, HUFA75542S3S

75A, 80V, 0.014 Ohm, N-Channel,

UltraFET® Power MOSFETs

Packaging

Symbol

Features

• Ultra Low On-Resistance

-rDS(ON) = 0.014Ω, VGS = 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC TO-220AB

JEDEC TO-263AB

DRAIN (FLANGE)

DRAIN

SOURCE

GATE

HUFA75542P3

HUFA75542S3S

GATE

SOURCE

DRAIN

(FLANGE)

D

G

S

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUFA75542P3

TO-220AB

75542P

HUFA75542S3S

TO-263AB

75542S

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA75542S3ST.

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

HUFA75542P3, HUFA75542S3S

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

80

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

80

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Drain Current

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

75

58

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

230

1.54

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

NOTE:

1. TJ = 25

oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

December 2001

Podobny numer części - HUFA75542P3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	HUFA75545P3	231Kb / 10P	75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET
Inchange Semiconductor ...	HUFA75545P3	266Kb / 2P	isc N-Channel MOSFET Transistor
Fairchild Semiconductor	HUFA75545S3S	231Kb / 10P	75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET

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Podobny opis - HUFA75542P3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	HUF75542P3	192Kb / 9P	75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
Intersil Corporation	HUF75542P3	166Kb / 11P	75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
Fairchild Semiconductor	HUF75337G3	226Kb / 10P	75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
Fairchild Semiconductor	HUF75645P3	204Kb / 10P	75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
Intersil Corporation	HUF75645P3	330Kb / 9P	75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
Fairchild Semiconductor	HUFA75337G3	225Kb / 10P	75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
Fairchild Semiconductor	HUFA75645P3	236Kb / 10P	75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
Intersil Corporation	HUF75337G3	106Kb / 9P	75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
Fairchild Semiconductor	HUFA75545P3	231Kb / 10P	75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET
Intersil Corporation	HUF75545P3	96Kb / 9P	75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET

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