BCP56T3G datasheet(3/5 Pages) ONSEMI

Numer części	BCP56T3G

Szczegółowy opis	NPN Silicon Epitaxial Transistor

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TYPICAL ELECTRICAL CHARACTERISTICS

100

10

1000

100

10

1

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 2. Current−Gain − Bandwidth Product

1000

100

10

100

10

1.0

1000

80

60

40

20

10

8.0

6.0

4.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitance

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

Figure 4. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 5. Base Emitter Saturation Voltage vs.

Collector Current

TJ = 125°C

TJ = 25°C

TJ = - 55°C

TJ = 25°C

Cibo

Cobo

1000

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0.01

0.1

1

0.1

0.01

0.001

0.2

0.3

0.4

0.6

0.8

0.9

1.1

1.2

IC/IB = 10

150°C

25°C

−55°C

0.5

0.7

1.0

IC/IB = 10

150°C

25°C

−55°C

Podobny numer części - BCP56T3G

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	BCP56T3G	74Kb / 5P	NPN Silicon Epitaxial Transistor April, 2016 ??Rev. 12

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