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HUFA76409D3S Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części HUFA76409D3S
Szczegółowy opis  17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUFA76409D3S Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HUFA76409D3, HUFA76409D3S Rev. A
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 12)
60
-
-
V
ID = 250µA, VGS = 0V , TC = -40
oC (Figure 12)
55
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 55V, VGS = 0V
-
-
1
µA
VDS = 50V, VGS = 0V, TC = 150
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±16V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 11)
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 18A, VGS = 10V (Figures 9, 10)
-
0.052
0.063
ID = 8A, VGS = 5V (Figure 9)
-
0.060
0.071
ID = 8A, VGS = 4.5V (Figure 9)
-
0.064
0.075
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
TO-251AA, TO-252AA
-
-
3.06
oC/W
Thermal Resistance Junction to
Ambient
RθJA
-
-
100
oC/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 30V, ID = 8A
VGS = 4.5V, RGS = 22Ω
(Figures 15, 21, 22)
-
-
153
ns
Turn-On Delay Time
td(ON)
-13-
ns
Rise Time
tr
-89-
ns
Turn-Off Delay Time
td(OFF)
-22-
ns
Fall Time
tf
-37-
ns
Turn-Off Time
tOFF
-
-
89
ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 30V, ID = 18A
VGS = 10V,
RGS = 24Ω
(Figures 16, 21, 22)
-
-
59
ns
Turn-On Delay Time
td(ON)
-5.3
-
ns
Rise Time
tr
-34-
ns
Turn-Off Delay Time
td(OFF)
-41-
ns
Fall Time
tf
-
50
-
ns
Turn-Off Time
tOFF
-
-
136
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 10V
VDD = 30V,
ID = 8A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
-12
15
nC
Gate Charge at 5V
Qg(5)
VGS = 0V to 5V
-
6.8
8.2
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 1V
-
0.54
0.65
nC
Gate to Source Gate Charge
Qgs
-1.7
-
nC
Gate to Drain “Miller” Charge
Qgd
-3
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
-
485
-
pF
Output Capacitance
COSS
-
130
-
pF
Reverse Transfer Capacitance
CRSS
-28-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 8A
-
-
1.25
V
ISD = 4A
-
-
1.0
V
Reverse Recovery Time
trr
ISD = 8A, dISD/dt = 100A/µs-
-
70
ns
Reverse Recovered Charge
QRR
ISD = 8A, dISD/dt = 100A/µs
-
-
165
nC
HUFA76409D3, HUFA76409D3S


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