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IRFWI550A Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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IRFWI550A Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ V DS = 100V Lower R DS(ON) : 0.032 (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Junction-to-Ambient Junction-to-Ambient R JC R JA R JA /W Characteristic Max. Units Symbol Typ. FEATURES D2-PAK 1. Gate 2. Drain 3. Source 1 3 2 1 2 3 I2-PAK * * When mounted on the minimum pad size recommended (PCB Mount). Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (T C=25 ) Continuous Drain Current (T C=100 ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T A=25 ) Total Power Dissipation (T C=25 ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value Units Symbol I DM V GS E AS I AR E AR dv/dt P D I D T J , TSTG T L A V mJ A mJ V/ns W W W/ A V DSS V * µ Ω O 1 O 2 O 3 ΟC ΟC O 1 O 1 ΟC ΟC ΟC ΟC ΟC θ θ ΟC θ IRFW/I550A BV DSS = 100 V R DS(on) = 0.04 I D = 40 A 100 40 28.3 160 640 40 16.7 6.5 3.8 167 1.11 - 55 to +175 300 0.9 40 62.5 -- -- -- Ω 20 + _ ©1999 Fairchild Semiconductor Corporation Rev. B |
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