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IRLS520A Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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IRLS520A Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page IRLS520A BV DSS = 100 V R DS(on) = 0.22Ω I D = 7.2 A 100 7.2 5 32 ±20 103 7.2 3.0 6.5 30 0.2 - 55 to +175 300 n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ V DS = 100V n Lower R DS(ON) : 0.176Ω (Typ.) Advanced Power MOSFET FEATURES Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (T C=25℃) Continuous Drain Current (T C=100℃) Drain Current-Pulsed ① Gate-to-Source Voltage Single Pulsed Avalanche Energy ② Avalanche Current ① Repetitive Avalanche Energy ① Peak Diode Recovery dv/dt ③ Total Power Dissipation (T C=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds Characteristic Value Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , TSTG T L A V mJ A mJ V/ns W W/℃ A ℃ V DSS V Rev. A 5 62.5 -- -- Thermal Resistance Junction-to-Case Junction-to-Ambient RθJC RθJA Characteristic Max. Units Symbol Typ. o C/W TO-220F 1.Gate 2. Drain 3. Source 3 2 1 |
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