Zakładka z wyszukiwarką danych komponentów |
|
KA1M0680RB-TU Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
|
KA1M0680RB-TU Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB 3 Electrical Characteristics (SFET part) (Ta=25 °C unless otherwise specified) Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain source breakdown voltage BVDSS VGS=0V, ID=50 µA 800 - - V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V -- 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static drain source on resistance (note) RDS(ON) VGS=10V, ID=4.0A - 1.6 2.0 Ω Forward transconductance (note) gfs VDS=15V, ID=4.0A 1.5 2.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1600 - pF Output capacitance Coss - 140 - Reverse transfer capacitance Crss - 42 - Turn on delay time td(on) VDD=0.5BVDSS, ID=6.0A (MOSFET switching time are essentially independent of operating temperature) -60- nS Rise time tr - 150 - Turn off delay time td(off) - 300 - Fall time tf - 130 - Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=6.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -70- nC Gate source charge Qgs - 16 - Gate drain (Miller) charge Qgd - 27 - S 1 R ---- = |
Podobny numer części - KA1M0680RB-TU |
|
Podobny opis - KA1M0680RB-TU |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |