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BCP53-16T3G Arkusz danych(PDF) 4 Page - ON Semiconductor |
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BCP53-16T3G Arkusz danych(HTML) 4 Page - ON Semiconductor |
4 / 5 page 2N7002E http://onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Qg, TOTAL GATE CHARGE (nC) 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 Figure 9. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.01 1 10 TJ = 25°C ID = 0.25 A 20 16 12 8 4 0 0 10 20 30 40 Ciss Coss Crss TJ = 25°C VGS = 0 V GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C TJ = 85°C VGS = 0 V 0.1 |
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