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BCP53-10T1G Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części BCP53-10T1G
Szczegółowy opis  PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 10
1
Publication Order Number:
BCP53T1/D
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
High Current
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
Device Marking:
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−80
Vdc
Collector−Base Voltage
VCBO
−100
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current
IC
1.5
Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage
Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
RqJA
83.3
°C/W
Lead Temperature for Soldering,
0.0625
″ from case
Time in Solder Bath
TL
260
10
°C
s
Device
Package
Shipping
ORDERING INFORMATION
SOT−223
CASE 318E
STYLE 1
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
MARKING DIAGRAM
BCP53T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
BCP53−16T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
BCP53−10T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
BCP53−16T3G
SOT−223
(Pb−Free)
4000/Tape & Reel
1
A
= Assembly Location
Y
= Year
W
= Work Week
XXXXX = Specific Device Code
G
= Pb−Free Package
AYW
XXXXX
G
G
(*Note: Microdot may be in either location)
SBCP53−16T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SBCP53−10T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SBCP53−10T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
2
4
3


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