SI1967DH-T1-GE3 datasheet(1/7 Pages) VISHAY

Numer części	SI1967DH-T1-GE3

Szczegółowy opis	Dual P-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si1967DH

Document Number: 68784

S10-0721-Rev. B, 29-Mar-10

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1

Dual P-Channel 20 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 20

0.490 at VGS = - 4.5 V

- 1.3a

1.6 nC

0.640 at VGS = - 2.5 V

- 1.2

0.790 at VGS = - 1.8 V

- 1.0

Marking Code

DF

XX

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

D2

S2

G2

D1

S1

G1

Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free)

Si1967DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 220 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 1.3a

A

TC = 70 °C

- 1.1

TA = 25 °C

- 1.0b, c

TA = 70 °C

- 0.83b, c

Pulsed Drain Current

IDM

- 3

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1

TA = 25 °C

- 0.6b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.25

W

TC = 70 °C

0.8

TA = 25 °C

0.74b, c

TA = 70 °C

0.47b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

130

170

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

80

100

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

PWM Optimized

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Devices

Podobny numer części - SI1967DH-T1-GE3

Producent	Numer części	Arkusz danych	Szczegółowy opis
VBsemi Electronics Co.,...	SI1967DH-T1-GE3	1,019Kb / 7P	Dual P-Channel 20 V (D-S) MOSFET

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