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2SD1164-Z Arkusz danych(PDF) 1 Page - Renesas Technology Corp |
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2SD1164-Z Arkusz danych(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page R07DS0254EJ0400 Rev.4.00 Page 1 of 4 Feb 24, 2011 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet 2SD1164-Z SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) CHARACTERISTICS SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 60 V Base to Emitter Voltage VEBO 8.0 V Collector Current (DC) IC(DC) 2 A Collector Current (pulse) Note 1 IC(pulse) 4 A Total Power Dissipation (TA = 25 °C) Note 2 PT 2.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm 2 × 0.7 mm R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 <R> |
Podobny numer części - 2SD1164-Z |
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Podobny opis - 2SD1164-Z |
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