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N0500S-T1-AT Arkusz danych(PDF) 2 Page - Renesas Technology Corp

Numer części N0500S-T1-AT
Szczegółowy opis  NPN SILICON EPITAXIAL TRANSISTOR
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0500S-T1-AT Arkusz danych(HTML) 2 Page - Renesas Technology Corp

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N0500S
R07DS0723EJ0100
Rev.1.00
Page 2 of 5
Mar 30, 2012
TYPICAL CHARACTERISTICS (Ta = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
0
20
40
60
80
100
120
TA - Ambient Temperature - ˚C
0
20
40
60
80
100
120
140
160
SAFE OPERATING AREA
0.01
0.1
1
10
100
10
1
VCE - Collector to Emitter Voltage - (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.02
0.01
0
02468
10
VCE - Collector to Emitter Voltage - (V)
VCE - Collector to Emitter Voltage - (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
1.6
2
2.0
1.0
1.5
3.0
IB = 0.5 mA
IC - Collector Current - (A)
10
100
1000
0.001
0.01
0.1
1
VCE = 1 V
Pulsed
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
0.001
0.01
0.1
1
0.001
0.01
0.1
1
VBE(sat)
VCE(sat)
IC = 10
IB
IC - Collector Current - (A)
Ta = 25˚C
Single pulse
100
90
20
30
40
50
60
70
80
IB = 10
A
1 ms
10 ms
100 ms
125˚C
25˚C
25˚C
4.0
2.5
3.5
4.5
5.0


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