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IRF3710ZS Arkusz danych(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRF3710ZS Arkusz danych(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 12 page 1 IRF3710Z IRF3710ZS IRF3710ZL HEXFET® Power MOSFET S D G VDSS = 100V RDS(on) = 18mΩ ID = 59A Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea- tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applica- tions and a wide variety of other applications. D2Pak IRF3710ZS TO-220AB IRF3710Z TO-262 IRF3710ZL Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.92 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 Max. 59 42 240 10 lbf•in (1.1N•m) 160 1.1 ± 20 170 200 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 www.kersemi.com |
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