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FQP6N80C Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FQP6N80C Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP6N80C FQPF6N80C Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A - Continuous (TC = 100°C) 3.2 3.2 * A IDM Drain Current - Pulsed (Note 1) 22 22 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 680 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 15.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 158 51 W - Derate above 25°C 1.27 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP6N80C FQPF6N80C Unit RθJC Thermal Resistance, Junction-to-Case 0.79 2.45 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G March 2013 FQP6N80C / FQPF6N80C N-Channel QFET MOSFET 800 V, 5.5 A, 2.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested www.fairchildsemi.com ©20 03 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0 |
Podobny numer części - FQP6N80C_13 |
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Podobny opis - FQP6N80C_13 |
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