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SFRU2955 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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SFRU2955 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page P-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response Fig 10. Max. Drain Current vs. Case Temperature Fig 9. Max. Safe Operating Area P DM . t 1. t 2. SFR/U2955 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 ms DC 1 ms 0.1 ms @ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) -V DS , Drain-Source Voltage [V] -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. V GS = 0 V 2. I D = -250 µA T J , Junction Temperature [ oC] -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 @ Notes : 1. V GS = -10 V 2. I D = -4.7 A T J , Junction Temperature [ oC] 25 50 75 100 125 150 0 2 4 6 8 T c , Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. ZθJC (t)=3.91 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T C =P DM *ZθJC (t) t 1 , Square Wave Pulse Duration [sec] |
Podobny numer części - SFRU2955 |
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Podobny opis - SFRU2955 |
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