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TLP785F Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLP785F Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 16 page TLP785,TLP785F 2012-02-20 3 Recommended Operating Conditions (Note) Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 85 °C (Note): Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0V, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 0.01 0.1 μA Collector dark current ID(ICEO) VCE = 24 V ,Ta = 85°C ― 0.6 50 μA Capacitance (collector to emitter) CCE V = 0V, f = 1 MHz ― 6 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit 50 ― 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB 100 ― 600 % ― 60 ― Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 ― ― % IC = 2.4 mA, IF = 8 mA ― ― 0.4 ― 0.2 ― Collector−emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB ― ― 0.4 V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0V, f = 1 MHz ― 0.8 ― pF Isolation resistance RS VS = 500 V 1×10 12 10 14 ― Ω AC, 1 minute 5000 ― ― AC, 1 second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― Vdc |
Podobny numer części - TLP785F |
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Podobny opis - TLP785F |
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