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LF256H Arkusz danych(PDF) 1 Page - Texas Instruments

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Numer części LF256H
Szczegółowy opis  JFET Input Operational Amplifiers
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LF256H Arkusz danych(HTML) 1 Page - Texas Instruments

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LF155, LF156, LF355, LF356, LF357
www.ti.com
SNOSBH0C – MAY 2000 – REVISED MARCH 2013
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers
Check for Samples: LF155, LF156, LF355, LF356, LF357
1
FEATURES
DESCRIPTION
These are the first monolithic JFET input operational
23
Advantages
amplifiers to incorporate well matched, high voltage
Replace Expensive Hybrid and Module FET Op
JFETs on the same chip with standard bipolar
Amps
transistors ( BI-FET™ Technology). These amplifiers
Rugged JFETs Allow Blow-Out Free Handling
feature low input bias and offset currents/low offset
voltage and offset voltage drift, coupled with offset
Compared with MOSFET Input Devices
adjust which does not degrade drift or common-mode
Excellent for Low Noise Applications Using
rejection. The devices are also designed for high slew
Either High or Low Source Impedance—Very
rate, wide bandwidth, extremely fast settling time, low
Low 1/f Corner
voltage and current noise and a low 1/f noise corner.
Offset Adjust Does Not Degrade Drift or
Common-Mode Rejection as in Most
Common Features
Monolithic Amplifiers
Low Input Bias Current:
30pA
New Output Stage Allows Use of Large
Low Input Offset Current:
3pA
Capacitive Loads (5,000 pF) without Stability
High Input Impedance:
1012
Ω
Problems
Low Input Noise Current:
0.01 pA/
√Hz
Internal Compensation and Large Differential
High Common-Mode Rejection Ratio:
100 dB
Input Voltage Capability
Large DC Voltage Gain:
106 dB
APPLICATIONS
Table 1. Uncommon Features
Precision High Speed Integrators
LF155/
LF156/
LF257/
Units
LF355
LF256/
LF357
Fast D/A and A/D Converters
LF356
(AV=5)
High Impedance Buffers
Extremely fast
4
1.5
1.5
μs
settling time to 0.01%
Wideband, Low Noise, Low Drift Amplifiers
Fast slew rate
5
12
50
V/µs
Logarithmic Amplifiers
Wide gain bandwidth
2.5
5
20
MHz
Photocell Amplifiers
Low input noise
20
12
12
nV /
√Hz
Sample and Hold Circuits
voltage
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
BI-FET is a trademark of Texas Instruments.
3
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2000–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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