1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PNP Silicon

Epitaxial Transistor

This PNP Silicon Epitaxial transistor is designed for use in linear and

switching applications. The device is housed in the SOT-223 package which is

designed for medium power surface mount applications.

• NPN Complement is PZT2222AT1

• The SOT-223 package can be soldered using wave or reflow

• SOT-223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed

leads absorb thermal stress during soldering eliminating the possibility of

damage to the die.

• Available in 12 mm tape and reel

Use PZT2907AT1 to order the 7 inch/1000 unit reel.

Use PZT2907AT3 to order the 13 inch/4000 unit reel.

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

– 60

Vdc

Collector-Base Voltage

VCBO

– 60

Vdc

Emitter-Base Voltage

VEBO

– 5.0

Vdc

Collector Current

IC

– 600

mAdc

Total Power Dissipation @ TA = 25°C(1)

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction-to-Ambient (surface mounted)

R

θJA

83.3

°C/W

Lead Temperature for Soldering, 0.0625

″ from case

Time in Solder Bath

TL

260

10

°C

Sec

DEVICE MARKING

P2F

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0)

V(BR)CBO

– 60

—

Vdc

Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)

V(BR)CEO

– 60

—

—

Vdc

Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)

V(BR)EBO

– 5.0

—

Vdc

Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0)

ICBO

—

–10

nAdc

Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc)

ICEX

—

—

– 50

nAdc

Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc)

IBEX

—

—

– 50

nAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by PZT2907AT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1996

PZT2907AT1

SOT-223 PACKAGE

PNP SILICON

TRANSISTOR

SURFACE MOUNT

Motorola Preferred Device

CASE 318E-04, STYLE 1

TO-261AA

1

2

3

4

COLLECTOR

2,4

BASE 1

3

EMITTER

REV 4