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80-M006PNB006SA-K614C Arkusz danych(PDF) 3 Page - Vincotech

Numer części 80-M006PNB006SA-K614C
Szczegółowy opis  Solderless interconnection
Download  17 Pages
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Producent  VINCOTECH [Vincotech]
Strona internetowa  http://www.vincotech.com
Logo VINCOTECH - Vincotech

80-M006PNB006SA-K614C Arkusz danych(HTML) 3 Page - Vincotech

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80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Tj=25°C
1,43
1,64
Tj=125°C
1,44
Tj=25°C
0,92
Tj=125°C
0,79
Tj=25°C
20,29
Tj=125°C
26,11
Tj=25°C
0,05
Tj=125°C
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
1,83
K/W
Tj=25°C
5
5,8
6,5
Tj=150°C
Tj=25°C
1,24
1,59
2,04
Tj=150°C
1,84
Tj=25°C
0,0004
Tj=150°C
Tj=25°C
300
Tj=150°C
Tj=25°C
105
Tj=150°C
102,4
Tj=25°C
21,8
Tj=150°C
27,8
Tj=25°C
142,2
Tj=150°C
163,6
Tj=25°C
102,7
Tj=150°C
132,4
Tj=25°C
0,15
Tj=150°C
0,22
Tj=25°C
0,15
Tj=150°C
0,19
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
3,03
K/W
Tj=25°C
1,42
Tj=150°C
1,36
Tj=25°C
3,92
Tj=150°C
5,82
Tj=25°C
182,7
Tj=150°C
288,1
Tj=25°C
0,32
Tj=150°C
0,77
di(rec)max
Tj=25°C
45
/dt
Tj=150°C
57
Tj=25°C
0,06
Tj=150°C
0,16
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
3,64
K/W
R25=1000
Tr=25°C
-3
3
R100=1670
Tr=100°C
-2
2
7,635*10-3
Tr=25°C
E
Vincotech NTC Reference
B-value
Tol. %
1/K
B(25/100)
Tr=25°C
1,731*10-5
1/K²
A-value
B(25/50)
Tol. %
42
368
11
V
15
1000
%
±15
Erec
VCE(sat)
ICES
Crss
Qrr
trr
IRRM
VF
QGate
Eon
Eoff
td(on)
Coss
tr
td(off)
Rgint
Input capacitance
tf
Output capacitance
Turn-off energy loss per pulse
Integrated Gate resistor
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Fall time
Value
Conditions
Characteristic Values
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
VF
Vto
rt
Input Rectifier Diode
25
25
25
V
V
m
mA
Reverse current
Ir
μC
A/
μs
Rgoff=64
f=1MHz
Rgon=64
0
20
15
Turn-on energy loss per pulse
Reverse recovered charge
Inverter Diode
Peak reverse recovery current
Reverse transfer capacitance
Diode forward voltage
Gate charge
Cies
Turn-off delay time
Peak rate of fall of recovery current
0
IGES
VGE(th)
Reverse recovery time
Turn-on delay time
Rise time
Gate-emitter leakage current
±15
Reverse recovered energy
VCE=VGE
600
25
0
6
6
6
6
480
6
300
300
% /K
0,76
R100
R100
1670
Rated resistance
R
Temperature coefficient
Deviation of R
ΔR/R
1600
Thermistor
Rgon=64
0,00009
28
mWs
Tr=25°C
Tr=25°C
V
ns
A
nC
nA
V
mA
mWs
ns
pF
62
Tj=25°C
Tj=25°C
copyright Vincotech
3
Revision: 1


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