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80-M006PNB006SA-K614C Arkusz danych(PDF) 3 Page - Vincotech |
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80-M006PNB006SA-K614C Arkusz danych(HTML) 3 Page - Vincotech |
3 / 17 page 80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 1,43 1,64 Tj=125°C 1,44 Tj=25°C 0,92 Tj=125°C 0,79 Tj=25°C 20,29 Tj=125°C 26,11 Tj=25°C 0,05 Tj=125°C Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 1,83 K/W Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,24 1,59 2,04 Tj=150°C 1,84 Tj=25°C 0,0004 Tj=150°C Tj=25°C 300 Tj=150°C Tj=25°C 105 Tj=150°C 102,4 Tj=25°C 21,8 Tj=150°C 27,8 Tj=25°C 142,2 Tj=150°C 163,6 Tj=25°C 102,7 Tj=150°C 132,4 Tj=25°C 0,15 Tj=150°C 0,22 Tj=25°C 0,15 Tj=150°C 0,19 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 3,03 K/W Tj=25°C 1,42 Tj=150°C 1,36 Tj=25°C 3,92 Tj=150°C 5,82 Tj=25°C 182,7 Tj=150°C 288,1 Tj=25°C 0,32 Tj=150°C 0,77 di(rec)max Tj=25°C 45 /dt Tj=150°C 57 Tj=25°C 0,06 Tj=150°C 0,16 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 3,64 K/W R25=1000 Ω Tr=25°C -3 3 R100=1670 Ω Tr=100°C -2 2 7,635*10-3 Tr=25°C E Vincotech NTC Reference B-value Tol. % 1/K B(25/100) Tr=25°C 1,731*10-5 1/K² A-value B(25/50) Tol. % 42 368 11 V 15 Ω 1000 % ±15 Erec VCE(sat) ICES Crss Qrr trr IRRM VF QGate Eon Eoff td(on) Coss tr td(off) Rgint Input capacitance tf Output capacitance Turn-off energy loss per pulse Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode Fall time Value Conditions Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) VF Vto rt Input Rectifier Diode 25 25 25 V V m Ω mA Reverse current Ir μC A/ μs Rgoff=64 Ω f=1MHz Rgon=64 Ω 0 20 15 Turn-on energy loss per pulse Reverse recovered charge Inverter Diode Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Cies Turn-off delay time Peak rate of fall of recovery current 0 IGES VGE(th) Reverse recovery time Turn-on delay time Rise time Gate-emitter leakage current ±15 Reverse recovered energy VCE=VGE 600 25 0 6 6 6 6 480 6 300 300 % /K 0,76 R100 R100 Ω 1670 Rated resistance R Temperature coefficient Deviation of R ΔR/R 1600 Thermistor Rgon=64 Ω 0,00009 28 mWs Tr=25°C Tr=25°C V ns A nC nA V mA mWs ns pF 62 Ω Tj=25°C Tj=25°C copyright Vincotech 3 Revision: 1 |
Podobny numer części - 80-M006PNB006SA-K614C |
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Podobny opis - 80-M006PNB006SA-K614C |
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