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2N2422 Arkusz danych(PDF) 1 Page - Digitron Semiconductors

Numer części 2N2422
Szczegółowy opis  SILICON UNIJUNCTION TRANSISTOR
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Producent  DIGITRON [Digitron Semiconductors]
Strona internetowa  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N2422 Arkusz danych(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N2417 - 2N2422, A, B
SILICON UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power dissipation(1)
PD
350
mW
RMS emitter current
IE
70
mA
Peak pulse emitter current (2)
ie
2
Amps
Emitter reverse voltage
VB2E
60
Volts
Interbase voltage
VB2B1
65
Volts
Operating junction temperature range
TJ
-65 to 175
°C
Storage temperature range
Tstg
-65 to 175
°C
Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.
Note 2: Capacitor discharge – 10µF or less, 30 volts or less.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Intrinsic standoff ratio
(VB2B1 = 10V) (1)
2N2417, 2N2417A, 2N2417B
2N2418, 2N2418A, 2N2418B
2N2419, 2N2419A, 2N2419B
2N2420, 2N2420A, 2N2420B
2N2421, 2N2421A, 2N2422B
2N2422, 2N2422A, 2N2422B
η
0.51
0.51
0.56
0.56
0.62
0.62
-
-
-
-
-
-
0.62
0.62
0.68
0.68
0.75
0.75
-
-
-
-
-
-
Interbase resistance
(VB2B1 = 3V, IE = 0)
2N2417, 2N2417A, 2N2417B
2N2418, 2N2418A, 2N2418B
2N2419, 2N2419A, 2N2419B
2N2420, 2N2420A, 2N2420B
2N2421, 2N2421A, 2N2422B
2N2422, 2N2422A, 2N2422B
rBB
4.7
6.2
4.7
6.2
4.7
6.2
-
-
-
-
-
-
6.8
9.1
6.8
9.1
6.8
9.1
kohms
Emitter saturation voltage
(VB2B1 = 10V, IE = 50mA)(2)
VEB1(sat)
-
3.5
-
Volts
Modulated interbase current
(VB2B1 = 10V, IE = 50mA)
IB2(mod)
-
15
-
mA
Emitter reverse current
(IB1 = 0)
VB2E = 60V
VB2E = 60V
VB2E = 30V
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
IEB2O
-
-
-
-
-
-
2
2
0.2
µA
Peak point emitter current
(VB2B1 = 25V)
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
IEB2O
-
-
-
-
-
-
12
12
6
µA
Valley point current
(VB2B1 = 20V, RB2 = 100ohms)(2)
IV
8
-
-
mA
Base-one peak pulse voltage(3)
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
VOB1
-
3
3
-
-
-
-
-
-
V
Note 1: Intrinsic standoff voltage: η = VP-VF/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VF = emitter to base one junction diode drop
(≈ 0.45V @ 10µA).
Note 2: PW ≈ 300µs, duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings
Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits.
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20121019


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