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OP166C Arkusz danych(PDF) 3 Page - OPTEK Technologies |
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OP166C Arkusz danych(HTML) 3 Page - OPTEK Technologies |
3 / 4 page OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue B 05/2011 Page 3 of 4 Plastic Infrared Emitting Diode OP165, OP166 Series Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT) Apertured Radiant Incidence OP165A, OP166A 1.95 - - mW/cm2 IF = 20 mA (2) PO Radiant Power Output OP165W, OP166W 0.50 - - mW IF = 20 mA VF Forward Voltage - - 1.60 V IF = 20 mA IR Reverse Current - - 100 µA VR= 2 V λP Wavelength at Peak Emission - 935 - nm IF = 10 mA B Spectral Bandwidth between Half Power Points - 50 - nm IF = 10 mA ∆λP /∆T Spectral Shift with Temperature OP165, OP166 (A, B, C, D) OP165W, OP166W - - - ±0.30 - - nm/°C IF = Constant θHP Emission Angle at Half Power Points OP165, OP166 (A, B, C, D) OP165W, OP166W - - 18 90 - - Degree IF = 20 mA tr Output Rise Time - 1000 - ns tf Output Fall Time - 500 - ns IF(PK)=100 mA, PW=10 µs, D.C.=10.0% Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage and Operating Temperature Range -40o C to +100o C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C Power Dissipation 100 mW(1) Notes: 1. Derate linearly 1.33 mW/°C above 25°C 2. EE(APT) is a measurement of the average apertured rediant incidence ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured areas. |
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