IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH40N120B3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

e

∅ P

TO-247 (IXYH) Outline

1

2

3

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

13

22

S

C

1690

pF

C

oes

V

157

pF

C

res

47

pF

Q

g(on)

87

nC

Q

ge

I

12

nC

Q

gc

38

nC

t

d(on)

22

ns

t

ri

50

ns

E

on

2.70

mJ

t

d(off)

177

ns

t

fi

183

ns

E

1.60

3.00 mJ

t

d(on)

24

ns

t

ri

60

ns

E

on

5.25

mJ

t

d(off)

205

ns

t

fi

206

ns

E

off

2.05

mJ

R

thJC

0.26 °C/W

R

thCS

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

Reverse Diode (FRED)

(T

Characteristic Value

Symbol

Test Conditions

Min.

Typ.

Max.

V

F

3.0

V

T

1.6

V

I

RM

4

A

t

rr

100

ns

R

thJC

0.9 °C/W

I

T

V

T

I