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MTB04N03H8 Arkusz danych(PDF) 5 Page - Cystech Electonics Corp. |
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MTB04N03H8 Arkusz danych(HTML) 5 Page - Cystech Electonics Corp. |
5 / 11 page CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 5/11 MTB04N03H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 40 80 120 160 0 2468 10 VDS, Drain-Source Voltage(V) 10V, 9V, 8V, 7V, 6V, 5V VGS=3V VGS=4V VGS=2V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150 200 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=2.5V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 2 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=125°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 10 20 30 40 50 60 70 80 90 100 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS=10V, ID=30A RDS(ON)@Tj=25°C : 3.2 mΩ VGS, Gate-Source Voltage(V) ID=30A |
Podobny numer części - MTB04N03H8 |
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Podobny opis - MTB04N03H8 |
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