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IXYP30N120C3 Arkusz danych(PDF) 5 Page - IXYS Corporation

Numer części IXYP30N120C3
Szczegółowy opis  High-Speed IGBT for 20-50 kHz Switching
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYP30N120C3 Arkusz danych(HTML) 5 Page - IXYS Corporation

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IXYP30N120C3
IXYH30N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
15
20
25
30
35
40
45
50
55
RG - Ohms
0
3
6
9
12
15
18
21
24
27
Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
VCE = 600V
I C = 30A
I C = 60A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
200
220
15
20
25
30
35
40
45
50
55
RG - Ohms
50
100
150
200
250
300
350
400
450
500
550
t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
VCE = 600V
I C = 60A
I C = 30A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
15
20
25
30
35
40
45
50
55
60
IC - Amperes
0
4
8
12
16
20
Eoff
Eon - - - -
RG = 10Ω , VGE = 15V
VCE = 600V
TJ = 150ºC
TJ = 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
25
50
75
100
125
150
TJ - Degrees Centigrade
0
4
8
12
16
20
Eoff
Eon - - - -
RG = 10Ω , VGE = 15V
VCE = 600V
IC = 30A
I C = 60A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
180
200
220
15
20
25
30
35
40
45
50
55
60
IC - Amperes
60
80
100
120
140
160
180
200
220
240
260
t f i
td(off) - - - -
RG = 10, VGE = 15V
VCE = 600V
TJ = 150ºC
TJ = 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
180
25
50
75
100
125
150
TJ - Degrees Centigrade
100
110
120
130
140
150
160
170
180
t f i
td(off) - - - -
RG = 10, VGE = 15V
VCE = 600V
I C = 60A
I C = 30A


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