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Z0103MA-116 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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3 / 13 page NXP Semiconductors Z0103MA 4Q Triac Z0103MA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 23 August 2013 3 / 13 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 600 V IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3 - 1 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 8 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 8.5 A I2t I2t for fusing tp = 10 ms; SIN - 0.32 A2s IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs; T2+ G+ - 50 A/µs IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs; T2+ G- - 50 A/µs IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs; T2- G- - 50 A/µs dIT/dt rate of rise of on-state current IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs; T2- G+ - 20 A/µs IGM peak gate current - 1 A PGM peak gate power - 2 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C |
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