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BAT721S Arkusz danych(PDF) 4 Page - NXP Semiconductors

Numer części BAT721S
Szczegółowy opis  Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAT721S Arkusz danych(HTML) 4 Page - NXP Semiconductors

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1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
4 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
6.
Thermal characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
1PS76SB21
-
-
450
K/W
BAT721
-
-
500
K/W
BAT721A
-
-
500
K/W
BAT721C
-
-
500
K/W
BAT721S
-
-
500
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF =10mA
[1] -
-
300
mV
IF = 100 mA
[1] -
-
420
mV
IF = 200 mA
[1] -
-
550
mV
IR
reverse current
VR = 30 V
--15
µA
VR = 30 V; Tj = 100 °C
--3
mA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
40
50
pF


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