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STP10NM60ND Arkusz danych(PDF) 9 Page - STMicroelectronics

Numer części STP10NM60ND
Szczegółowy opis  N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10NM60ND Arkusz danych(HTML) 9 Page - STMicroelectronics

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STD10NM60ND, STF10NM60ND, STP10NM60ND
Test circuits
Doc ID 18467 Rev 2
9/19
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µF
VDD
AM01469v1
VDD
47k
1k
47k
2.7k
1k
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
A
A
B
B
RG
G
FAST
DIODE
D
S
L=100
µH
µF
3.3
1000
µF
VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS


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