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STP10NM60ND Arkusz danych(PDF) 9 Page - STMicroelectronics |
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STP10NM60ND Arkusz danych(HTML) 9 Page - STMicroelectronics |
9 / 19 page STD10NM60ND, STF10NM60ND, STP10NM60ND Test circuits Doc ID 18467 Rev 2 9/19 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive load test circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 µF 3.3 µF VDD AM01469v1 VDD 47k Ω 1k Ω 47k Ω 2.7k Ω 1k Ω 12V Vi=20V=VGMAX 2200 µF PW IG=CONST 100 Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 µF 3.3 µF VDD AM01472v1 V(BR)DSS VDD VDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tf tr 90% 10% 10% 0 0 90% 90% 10% VGS |
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