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FQD7N20LTM Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FQD7N20LTM
Szczegółowy opis  N-Channel QFET짰 MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD7N20LTM Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
©2004 Fairchild Semiconductor Corporation
FQD7N20L Rev. C1
www.fairchildsemi.com
2
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQD7N20L
FQD7N20LTM
DPAK
330 mm
16 mm
2500 units
Packing Method
Tape and Reel
Electrical Characteristics T
C = 25°C unless otherwise noted.
(Note 4)
(Note 4)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.17
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
--
--
1
µA
VDS = 160 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.75 A
VGS = 5 V, ID = 2.75 A
--
0.59
0.62
0.75
0.78
gFS
Forward Transconductance
VDS = 30 V, ID = 2.75 A
--
5.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
390
500
pF
Coss
Output Capacitance
--
55
70
pF
Crss
Reverse Transfer Capacitance
--
8.5
11
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 100 V, ID = 6.5 A,
RG = 25 Ω
--
12
35
ns
tr
Turn-On Rise Time
--
125
260
ns
td(off)
Turn-Off Delay Time
--
20
50
ns
tf
Turn-Off Fall Time
--
65
140
ns
Qg
Total Gate Charge
VDS = 160 V, ID = 6.5 A,
VGS = 5 V
--
6.8
9.0
nC
Qgs
Gate-Source Charge
--
1.6
--
nC
Qgd
Gate-Drain Charge
--
3.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
22
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5.5 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 6.5 A,
dIF / dt = 100 A/µs
--
110
--
ns
Qrr
Reverse Recovery Charge
--
0.44
--
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 3.6 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 6.5 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.


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