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BC414C Arkusz danych(PDF) 1 Page - Continental Device India Limited |
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BC414C Arkusz danych(HTML) 1 Page - Continental Device India Limited |
1 / 5 page NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC413, B, C BC414, B, C TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL UNITS Collector Emitter Voltage VCEO V Collector Base Voltage VCBO V Emitter Base Voltage VEBO V Collector Current Continuous IC mA Power Dissipation at Ta=25ºC PD mW Derate Above 25ºC mW/ºC Power Dissipation at Tc=25ºC PD W Derate Above 25ºC mW/ºC Operating and Storage Junction Temperature Range TJ, Tstg ºC THERMAL RESISTANCE Junction to Case Rth (j-c) ºC/W Junction to Ambient in free air Rth (j-a) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BC413 BC414 UNITS Collector Emitter Voltage VCEO IC=1mA, IB=0 >30 >45 V Collector Base Voltage VCBO IC=10µA, IE=0 >45 >50 V Emitter Base Voltage VEBO IE=10µA, IC=0 V Collector Cut Off Current ICBO VCB=30V, IE=0 nA VCB=30V, IE=0, Ta= +125ºC µA Emitter Cut Off Voltage IEBO VEB=4V, IC=0, nA DC Current Gain hFE IC=10µA, VCE=5V, BC413/414 IC=2mA, VCE=5V BC413B/414C BC413C/414C BC413/414 Collector Emitter Saturation Voltage VCE (sat) IC=10mA, IB=0.5mA V IC=10mA, IB=see * V **IC=100mA, IB=5mA V Base Emitter Saturation Voltage VBE (sat) **IC=100mA, IB=5mA V Base Emitter On Voltage VBE (on) IC=10µA, VCE=5V V IC=100µA, VCE=5V V IC=2mA, VCE=5V V *IB is Value for Which IC=11mA at VCE=1V **Pulse test:- Pulse Width =300 µµs, Duty Cycle 2% BC413_414Rev060706E 5.0 357 100 1.0 2.8 350 125 8.0 - 55 to +150 <15 <15 TYP0.55 0.55 - 0.75 BC413 BC414 30 45 45 50 380 - 800 180 - 800 >5.0 TYP0.52 <0.25 <0.6 <5.0 >100 180 - 460 TYP1.1 <0.6 C B E Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Podobny numer części - BC414C |
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Podobny opis - BC414C |
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