BC184LC datasheet(1/4 Pages) CDIL

Numer części	BC184LC

Szczegółowy opis	SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS

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Producent	CDIL [Continental Device India Limited]

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NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS

BC184L, BC184LB

BC184LC

TO-92

Plastic Package

General Purpose Amplifier Transistors

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector -Emitter Voltage

VCEO

30

V

Collector -Base Voltage

VCBO

45

V

Emitter -Base Voltage

VEBO

6.0

V

Collector Current Continuous

IC

100

mA

Power Dissipation @ Ta=25ºC

PD

350

mW

Derate Above 25ºC

2.8

mW/ºC

Power Dissipation @ Tc=25ºC

PD

1.0

W

Derate Above 25ºC

8.0

mW/ºC

Operating And Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

125

ºC/W

Junction to Ambient

Rth(j-a)

357

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

Collector -Emitter Voltage

VCEO

IC=2mA,IB=0

30

V

Collector -Base Voltage

VCBO

IC=10µA.IE=0

45

V

Emitter-Base Voltage

VEBO

IE=100µA, IC=0

6V

Collector-Cut off Current

ICBO

VCB=30V,IE=0

0.2

15

nA

Emitter-Cut off Current

IEBO

VEB=4V, IC=0

15

nA

DC Current Gain

hFE

IC=10µA,VCE=5V

100

BC184L

IC=2mA,VCE=5V

240

800

IC=100mA,VCE=5V

130

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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